High-resolution capability of optical near-field imprint lithography
High-resolution capability of optical near-field imprint lithography
复制标题
光学近场压印光刻的高分辨率能力
DOI：
10.1007/s00340-006-2328-5
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
M. Ohtsu
中科院分区：
文献类型：
--
作者：
T. Yatsui;Y. Nakajima;W. Nomura;M. Ohtsu
我们提出了一种新的方法来提高压印光刻的分辨率，通过引入强本地化的光学近场强度，这取决于模具结构。通过优化SiO2线-空间（LS）模具上的金属膜的厚度，没有侧壁涂层，我们证实，光学近场强烈地定位在模具的边缘，使用时域有限差分计算方法。基于计算结果，我们使用具有金属化（20 nm厚的Al，没有侧壁涂层）SiO2 LS的模具进行光学近场压印光刻，其中半间距为300 nm，深度为200 nm，使用g线（λ=436 nm）照射，并获得窄至50 nm宽的特征。
We propose a novel method to increase the resolution of imprint lithography by introducing strong localization of the optical near-field intensity, depending on the mold structure. By optimizing the thickness of the metallic film on a SiO2line-and-space (LS) mold without a sidewall coating, we confirmed that the optical near-field strongly localizes at the edge of the mold, using a finite-difference time-domain calculation method. Based on the calculated results, we performed optical near-field imprint lithography using a mold with metallized (20-nm-thick Al without a sidewall coating) SiO2LS with a 300-nm half-pitch that was 200-nm deep with illumination using the g-line (λ=436 nm), and obtained features as narrow as 50 nm wide.