Temperature Dependence of the Impact Ionization Coefficients in AlAsSb Lattice Matched to InP
Temperature Dependence of the Impact Ionization Coefficients in AlAsSb Lattice Matched to InP
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DOI：
10.1109/jstqe.2021.3099912
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发表时间：
2022-03-01
影响因子：
4.9
通讯作者：
David, John P. R.
中科院分区：
文献类型：
--
作者：
Jin, Xiao;Xie, Shiyu;David, John P. R.
通过测量三个p（+）-i-n（+）和两个n（+）-i-p（+）二极管中的雪崩倍增，测定了AlAsSb电离系数在210 ~ 335 K范围内的温度依赖性。电子和空穴的电离系数降低在近似相同的速率，随着温度的升高，但远低于在InAlAs或InP。这导致在1.55 μ m厚的p（+）-i-n（+）结构中击穿电压随温度的变化明显更小，为13 mV/K，对于10 Gb/s的InGaAs/AlAsSb分离吸收和倍增雪崩光电二极管（SAM-APD），计算出的击穿电压为15.58 mV/K。蒙特-卡罗建模表明，这种降低的温度依赖性的主要原因是含Sb合金中增加的合金散射，降低了声子散射率随温度变化的影响。
The temperature dependence of the ionization coefficients of AlAsSb has been determined from 210 K to 335 K by measuring the avalanche multiplication in a series of three p(+)-i-n(+) and two n(+)-i-p(+) diodes. Both electron and hole ionization coefficients reduce at approximately the same rate as the temperature increases but much less so than in InAlAs or InP. This results in a significantly smaller breakdown voltage variation with temperature of 13 mV/K in a 1.55 mu m thick p(+)-i-n(+) structure and a calculated 15.58 mV/K for a 10 Gb/s InGaAs/AlAsSb separate absorption and multiplication avalanche photodiode (SAM-APD). Monte-Carlo modelling suggests that the primary reason for this reduced temperature dependence is the increased alloy scattering in the Sb containing alloy, reducing the impact of variation in phonon scattering rate with temperature.