High-speed switching operation for a SiC CMOS and power module
High-speed switching operation for a SiC CMOS and power module
复制标题
SiC CMOS和电源模块的高速开关操作
DOI：
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发表时间：
2021
影响因子：
0.8
通讯作者：
Hiroshi Sato
中科院分区：
文献类型：
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作者：
A. Yao;M. Okamoto;F. Kato;H. Hozoji;Shinji Sato;S. Harada;Hiroshi Sato
研究了采用碳化硅互补金属氧化物半导体（CMOS）和功率模块的高速驱动器主电路的高速开关操作。当使用开发的功率模块和SiC CMOS栅极缓冲器时，我们在直流总线电压为600 V和负载电流为20 A的情况下，实验实现了约-100 V/ns和80 V/ns的导通和关断开关速度。根据所研制的SiC CMOS器件的I-V特性和SiC功率MOSFET的栅电荷，计算了其开关时间。关键词：模块，SiC CMOS，高速开关，宽带隙功率半导体，栅极驱动器，SiC MOSFET分类：功率器件和电路
This paper deals with the high-speed switching operation of a main circuit when using a silicon carbide (SiC) complementary metaloxide semiconductor (CMOS) and power module for the high-speed drive. When using the developed power module and SiC CMOS gate buffer, we experimentally achieved the turn-on and turn-of switching speeds of about −100 and 80 V/ns at a DC bus voltage of 600 V and a load current of 20 A. Based on the I -V characteristics of the developed SiC CMOS and the gate charge of the SiC power MOSFET, the approximate switching time was calculated. key words: Module, SiC CMOS, high-speed switching, wide-bandgap power semiconductors, gate driver, SiC MOSFET Classification: Power devices and circuits