Transresistance and current gain of high‐Tc flux flow transistors
Transresistance and current gain of high‐Tc flux flow transistors
复制标题
高 Tc 磁通流晶体管的跨阻和电流增益
DOI：
10.1063/1.357248
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发表时间：
1994
影响因子：
3.2
通讯作者：
M. Suzuki
中科院分区：
文献类型：
--
作者：
K. Miyahara;S. Kubo;M. Suzuki
从现象和实验上研究了高Tc磁通流晶体管的通阻和电流增益与器件磁通流特性的关系。结果表明，跨阻与涡流速度、通道宽度以及通道与控制电流线之间的磁耦合系数成正比。用共蒸发NdCeCuO薄膜制备了该器件，并测量了其通阻对控制电流的依赖关系。发现跨阻峰值出现在高控制电流水平，对应于流动电压的饱和。跨电阻峰值为1.25 Ω。讨论了流电压饱和机理与器件通道腐蚀的关系。
The transresistance and current gain of high‐Tc flux flow transistors were investigated phenomenologically and experimentally in relation to the flux flow characteristics of the devices. It was shown that the transresistance was in proportion to the vortex flow velocity, the channel width, and the magnetic coupling coefficient between the channel and the control current line. The devices were fabricated from thin films of coevaporated NdCeCuO, and the control current dependence of their transresistance was measured. It was found that the transresistance peak appeared at a high control current level that corresponded to the saturation of the flow voltage. The peak value of the transresistance was 1.25 Ω. The flow voltage saturation mechanism is discussed in relation to the channel etching of the devices.