Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method.
Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method.
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DOI：
10.1186/1556-276x-7-54
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发表时间：
2012-01-05
影响因子：
--
通讯作者：
Lee YH
中科院分区：
文献类型：
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作者：
Jo SH;Lee SG;Lee YH
在BFO和PZT金属醇盐溶液交替作用下，采用旋涂法在Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si（100）衬底上制备了Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO]多层薄膜。重复涂覆和加热过程以形成多层薄膜。所有PZT/BFO多层薄膜均表现出无空洞、均匀的晶粒结构，不存在玫瑰花结结构。六层PZT/BFO [PZT/BFO-6]薄膜的相对介电常数和介电损耗分别约为405和0.03%。随着涂层数量的增加，残余极化和矫顽力场增大。BFO-6多层薄膜的温度分别为41.3 C/cm2和15.1 MV/cm。BFO-6多层薄膜在5 V时的漏电流密度为2.52 × 10-7 A/cm2。
In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2.