Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions
Electroluminescent and transport mechanisms of n-ZnO/p-Si heterojunctions
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DOI：
10.1063/1.2201895
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发表时间：
2006-05-01
影响因子：
4
通讯作者：
Zheng, YD
中科院分区：
文献类型：
--
作者：
Ye, JD;Gu, SL;Zheng, YD
基于n-ZnO/p-Si异质结实现了室温下清晰可见的电致发光。EL峰能量与ZnO的深能级光致发光峰能量吻合较好，表明EL发射是由n-ZnO层中的深能级缺陷引起的辐射复合引起的。根据ZnO/Si异质结的能带图，结合电流-电压（I-V）和光-输出-电压（L-V）特性，讨论了器件的输运机制。在低正向偏压下，载流子的输运过程主要为深能级隧穿机制，而在高正向偏压下，载流子的输运过程主要为空间电荷限制的电流传导。二极管的光输出电流（L-I）特性遵循类似于I-m的幂律，在低注入电流下表现为超线性，在高电流下由于非辐射复合中心的饱和而几乎变为线性。(c)2006年，美国物理学会。
The distinct visible electroluminescence (EL) at room temperature has been realized based on n-ZnO/p-Si heterojunction. The EL peak energy coincided well with the deep-level photoluminescence of ZnO, suggesting that the EL emission was originated from the radiative recombination via deep-level defects in n-ZnO layers. The transport mechanisms of the diodes have been discussed with the characteristics of current-voltage (I-V) and light-output-voltage (L-V), in terms of the energy band diagram of ZnO/Si heterojunction. The tunneling mechanism via deep-level states was the main conduction process at low forward bias, while space-charge-limited current conduction dominated the carrier transport at higher bias. Light-output-current (L-I) characteristic of the diode followed a power law such as L similar to I-m, which showed a superlinear behavior at low injection current and became almost linear due to the saturation of nonradiative recombination centers at high current level. (c) 2006 American Institute of Physics.