Magnetologic with α-MnAs thin films
Magnetologic with α-MnAs thin films
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α-MnAs 薄膜磁学
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
K. Ploog
中科院分区：
文献类型：
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作者：
C. Pampuch;A. Das;A. Ney;L. Däweritz;R. Koch;K. Ploog
利用当今计算中的自旋信息，效率有望得到极大的提高。MNAs是一种很有前途的与半导体相兼容的室温铁磁材料。通过灵敏的悬臂梁磁场测量，我们发现在α(001)衬底上的薄膜表现出一个额外的小的面外磁化分量，它与主要的面内磁化强度是磁耦合的。我们证明，通过将这两个分量作为独立的输入，α-MNAs层可以用作具有非易失性输出的逻辑门。该层的逻辑功能可以在运行时预先选择为AND或OR，从而为可编程磁学器件提供了前景。
Taking advantage of the spin information in present day computing is expected to yield an enormous increase in efficiency. A promising ferromagnetic material compatible with semiconductors for room temperature applications is MnAs. By sensitive cantilever beam magnetometry, we discovered that α-MnAs films on GaAs(001) exhibit an additional small out-of-plane component of the magnetization which is magnetically coupled with the dominant in-plane magnetization. We demonstrate that by regarding the two components as independent inputs, the α-MnAs layer can be utilized as a logic gate with nonvolatile output. The logic functionality of the layer can be preselected to be AND or OR at run time, thus offering the perspective for programmable magnetologic devices.