'Memristive' switches enable 'stateful' logic operations via material implication
'Memristive' switches enable 'stateful' logic operations via material implication
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DOI：
10.1038/nature08940
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发表时间：
2010-04-08
期刊：
影响因子：
64.8
通讯作者：
Williams, R. Stanley
中科院分区：
文献类型：
--
作者：
Borghetti, Julien;Snider, Gregory S.;Williams, R. Stanley
国际半导体技术路线图（International Technology Roadmap for Semiconductors）（1）的作者-为推进硅集成电路技术而建立的行业共识目标集-已经挑战计算研究社区，以找到新的物理状态变量（而不是电荷或电压），新器件和新架构，提供超出标准晶体管的存储器和逻辑功能（1-6）。最近，已经展示了由各种两端半导体或绝缘体薄膜器件构建的超密集电阻存储器阵列（7-12）。其中，双极电压致动开关已被确定为“忆阻器”或忆阻器件的物理实现，其组合了存储器元件和电阻器的电特性（13，14）。这种器件最早由Chua在1971年提出（参考文献15），其特征在于一个或多个状态变量（16），这些变量根据开关的电压历史定义开关的电阻。在这里，我们表明，这个家庭的非线性动态存储器设备也可以用于逻辑运算：我们证明，他们可以执行材料的含义（IMP），这是一个基本的布尔逻辑运算的两个变量p和q，使pIMPq相当于（NOTp）ORq。结合在适当的电路（17，18）内，忆阻开关因此可以执行“有状态”逻辑操作，对于该逻辑操作，相同的器件同时用作门（逻辑）和锁存器（19）（存储器），其使用电阻而不是电压或电荷作为物理状态变量。
The authors of the International Technology Roadmap for Semiconductors(1)-the industry consensus set of goals established for advancing silicon integrated circuit technology-have challenged the computing research community to find new physical state variables (other than charge or voltage), new devices, and new architectures that offer memory and logic functions(1-6) beyond those available with standard transistors. Recently, ultra-dense resistive memory arrays built from various two-terminal semiconductor or insulator thin film devices have been demonstrated(7-12). Among these, bipolar voltage-actuated switches have been identified as physical realizations of 'memristors' or memristive devices, combining the electrical properties of a memory element and a resistor(13,14). Such devices were first hypothesized by Chua in 1971 (ref. 15), and are characterized by one or more state variables(16) that define the resistance of the switch depending upon its voltage history. Here we show that this family of nonlinear dynamical memory devices can also be used for logic operations: we demonstrate that they can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq. Incorporated within an appropriate circuit(17,18), memristive switches can thus perform 'stateful' logic operations for which the same devices serve simultaneously as gates (logic) and latches(19) (memory) that use resistance instead of voltage or charge as the physical state variable.