Room-temperature electroluminescence from Si microdisks with Ge quantum dots.
Room-temperature electroluminescence from Si microdisks with Ge quantum dots.
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DOI：
10.1364/oe.18.013945
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发表时间：
2010-06
期刊：
影响因子：
3.8
通讯作者：
J. Xia;Yuuki Takeda;N. Usami;T. Maruizumi;Y. Shiraki
中科院分区：
文献类型：
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作者：
J. Xia;Yuuki Takeda;N. Usami;T. Maruizumi;Y. Shiraki
采用Ge自组装量子点嵌入硅微盘谐振腔的方法，在绝缘体上硅（SOI）上制备了电流注入型硅基发光器件。在电流注入条件下，成功地观察到Ge量子点在微盘中自组装的室温共振电致发光（EL），并通过数值模拟很好地识别了所观察到的与微盘谐振器支持的回音壁模式（WGM）相对应的EL峰。
A current-injected silicon-based light-emitting device was fabricated on silicon-on-insulator (SOI) by embedding Ge self-assembled quantum dots into a silicon microdisk resonator with p-i-n junction for current-injection. Room-temperature resonant electroluminescence (EL) from Ge self-assembled quantum dots in the microdisk was successfully observed under current injection, and observed EL peaks corresponding to the whispering gallery modes (WGMs) supported by the microdisk resonator were well identified by means of numerical simulations.