Photo-Seebeck study of amorphous germanium-tellurium-oxide films
Photo-Seebeck study of amorphous germanium-tellurium-oxide films
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非晶氧化锗碲薄膜的光塞贝克研究
DOI：
10.1007/s10854-020-04702-y
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Gholizadeh A
中科院分区：
文献类型：
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作者：
Gholizadeh A
本文报道了含氧~ 31%的非晶态碲化锗（100 nm）薄膜在黑暗条件下和400 ~ 1800 nm波长单色光下的塞贝克系数的测定。研究发现，与在黑暗中测量的值相比，胶片暴露在光线下会降低塞贝克系数的绝对值。此外，这种减少的幅度在所覆盖的波长范围内显示出独特的光谱依赖性。观察到的行为表明，这些测量提供了一种确定非晶硫系薄膜光学带隙的方法。对数据的进一步分析，以及x射线光电子能谱和光电导率研究，用于确定亚带隙缺陷态的存在及其在确定塞贝克系数光学响应中的作用。
The measurement of the Seebeck coefficient of thin film (100 nm) amorphous germanium telluride containing ~ 31% oxygen under dark conditions and when exposed to monochromatic light in the 400 nm to 1800 nm wavelength region is reported. Exposure of the films to light is found to reduce the absolute value of the Seebeck coefficient compared to that measured in the dark. Furthermore, the magnitude of this reduction displays a distinctive spectral dependence over the wavelength range covered. The observed behaviour suggests that these measurements provide a method determining the optical bandgap of thin amorphous chalcogenide films. Further analysis of the data, along with that of X-ray photoelectron spectroscopy and photoconductivity studies, is used to determine the presence of sub-bandgap defect states and their role in determining the optical response of the Seebeck coefficient.