Wide spectral coverage (0.7-2.2 eV) lattice-matched multijunction solar cells based on AlGaInP, AlGaAs and GaInNAsSb materials
Wide spectral coverage (0.7-2.2 eV) lattice-matched multijunction solar cells based on AlGaInP, AlGaAs and GaInNAsSb materials
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DOI：
10.1002/pip.3412
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发表时间：
2021-03-09
影响因子：
6.7
通讯作者：
Guina, Mircea
中科院分区：
文献类型：
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作者：
Aho, Arto;Isoaho, Riku;Guina, Mircea
我们报告的进展，在发展晶格匹配的GaAs基太阳能电池的重点发展AlGaInP，AlGaAs，和GaInNAsSb材料，旨在实现宽光谱覆盖范围，即0.7-2.2 eV。为此，我们首先基准性能的直立四结GaInP/GaAs/GaInNAsSb/GaInNAsSb太阳能电池生长的p-GaAs衬底上的分子束外延带隙分别为1.88，1.42，1.17，和0.93 eV。四结电池在560个太阳光照下表现出类似于39%的效率，同时甚至在高达1000个太阳光照下也表现出良好的电性能。作为进一步将效率提高到50%水平的第一步，我们展示了AlGaInP（>2 eV）和GaInNAsSb（
We report on the progress in developing lattice-matched GaAs-based solar cells with focus on developing AlGaInP, AlGaAs, and GaInNAsSb materials, aiming at achieving a wide spectral coverage, that is, 0.7-2.2 eV. To this end, we first benchmark the performance of an upright four-junction GaInP/GaAs/GaInNAsSb/GaInNAsSb solar cells grown by molecular beam epitaxy on p-GaAs substrates with bandgaps of 1.88, 1.42, 1.17, and 0.93 eV, respectively. The four-junction cell exhibited an efficiency of similar to 39% at 560-sun illumination while showing good electrical performance even up to 1000 suns. As a first step to further improve the efficiency toward 50% level, we demonstrate AlGaInP (>2 eV) and GaInNAsSb (