Surface electronic properties of In-rich InGaN alloys grown by MOCVD
Surface electronic properties of In-rich InGaN alloys grown by MOCVD
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DOI：
10.1002/pssc.201100463
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发表时间：
2012-03
期刊：
影响因子：
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通讯作者：
W. Linhart;Ö. Tuna;T. Veal;James J. Mudd;C. Giesen;M. Heuken;C. McConville
中科院分区：
文献类型：
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作者：
W. Linhart;Ö. Tuna;T. Veal;James J. Mudd;C. Giesen;M. Heuken;C. McConville
用X射线光电子能谱、红外反射率和霍尔效应测量研究了用金属有机物化学气相沉积法生长的富In InxGa_（1-xN）合金（0.20 ≤ x ≤ 1.00）的能带弯曲、清洁表面的费米能级位置和体费米能级。在HCl中湿法蚀刻InxGa 1-xN合金成功地减少了表面的原生氧化物，使这些测量更准确地进行。电子积累层，伴随着向下的能带弯曲，存在于表面处，随着Ga分数的增加，在x = 0.2处出现平带条件的减少。（© 2012 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
The band bending, position of Fermi level at the cleaned surfaces and bulk Fermi level of In-rich InxGa1–xN alloys grown by metal-organic chemical vapor deposition with a composition of 0.20 ≤ x ≤ 1.00 have been investigated using X-ray photoemission spectroscopy, infrared reflectivity and Hall effect measurements. Wet etching of InxGa1–xN alloys in HCl successfully reduced the native oxides at the surface, allowing these measurements to be performed more accurately. Electron accumulation layers, accompanied by downward band bending, are present at the surface, with a decrease to flatband conditions occurring at x ≈ 0.2 with increasing Ga fraction. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)