Investigation of the microstructure and electronic features for Ce3+-doped YAG crystal: A first-principle study
Investigation of the microstructure and electronic features for Ce3+-doped YAG crystal: A first-principle study
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Ce3 掺杂 YAG 晶体的微观结构和电子特征研究:第一性原理研究
DOI:
10.1016/j.commatsci.2021.110762
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发表时间:
2021-12
影响因子:
3.3
通讯作者:
Yuanyuan Jin
中科院分区:
文献类型:
--
作者:
Shihao Hu;Meng Ju;Peng Wang;Mingmin Zhong;Chuanzhao Zhang;Yuanyuan Jin
The Ce 3+-doped YAG crystal has drawn considerable interest because of its important application in the white light-emitting diodes. However, the fundamental understanding of its microstructure is still lacking. In this work, the structural evolution and electronic properties of Ce 3+-doped YAG crystal are systematically studied on the basis of the density functional theory (DFT) as well as Crystal structure Analysis by Particle Swarm Optimization (CALYPSO) method. A novel stable phase with cage-like structure and C 222 space group of Ce 3+-doped YAG crystal has been reported. The calculations of the electronic band structure indicate that the Ce 3+-doped YAG possesses a conductive character because the Fermi level is crossed through by the conduction band. By analyzing the electronic density of states (DOS), we conclude that the reason of the elimination of the insulated character can be attributed to the impurity Ce 3+. The bond character between the Ce-O and YO are identified by the calculation of the electron localization function (ELF). These results can offer significant information for exploring new rare-earth doped laser materials and also provide useful insights to elucidate some experimental phenomena.
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影响因子:
5.5
作者:
Ju Meng;Wang Jingjing;Huang Jing;Zhang Chuanzhao;Jin Yuanyuan;Sun Weiguo;Li Shichang;Chen Yunhong
通讯作者:
Chen Yunhong
影响因子:
6.2
作者:
Xiaowu He;Yanbiao Ren;Caixia Hu;Ben Ma;Hao Chen;Shushan Huang;Hongyue Hao;Tongtong Qi;Xiaofang Liu;Ronghai Yu
通讯作者:
Ronghai Yu
影响因子:
6.3
作者:
Wang, Yanchao;Lv, Jian;Ma, Yanming
通讯作者:
Ma, Yanming
DOI:
10.1073/pnas.1118168109
发表时间:
2012-04-24
影响因子:
11.1
作者:
Wang, Hui;Tse, John S.;Ma, Yanming
通讯作者:
Ma, Yanming
影响因子:
3.7
作者:
Kresse, G;Furthmuller, J
通讯作者:
Furthmuller, J