Processing of Nanoscale Gaps for Boron-doped Nanocrystalline Diamond Based MEMS☆

Processing of Nanoscale Gaps for Boron-doped Nanocrystalline Diamond Based MEMS☆
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硼掺杂纳米晶金刚石基 MEMS 纳米级间隙的加工

DOI：
10.1016/j.proeng.2014.11.301
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发表时间：
2014
期刊：
Procedia Engineering
影响因子：
--
通讯作者：
V. Lebedev
V. Lebedev
中科院分区：
--
文献类型：
--
作者：
D. Iankov;V. Zuerbig;W. Pletschen;C. Giese;R. Iannucci;O. Ambacher;V. Lebedev

文献摘要

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在这项工作中，我们提出了一个技术工艺流程，使纳米晶金刚石为基础的MEMS的横向纳米功能的制造。纳米模板上金刚石薄膜的生长、投影曝光光刻和双层电子束光刻是其关键技术。用尺寸为1×1 μm2的悬浮微板成功地实现了100 nm量级的电极间隙。
In this work we present a technological process flow enabling fabrication of transversal nanofeatures in nanocrystalline diamond based MEMS. Growth of thin diamond films on nanostructured templates, projection exposure lithography and bi-layer electron beam lithography are the key technologies used. Electrode gaps in the order of 100 nm have been successfully accomplished with suspended microplates with dimensions of 1×1 μm2.