Impacts of finger numbers on forced current gain in multi-finger 10 kV-class SiC bipolar junction transistors with reduced base spreading resistance
Impacts of finger numbers on forced current gain in multi-finger 10 kV-class SiC bipolar junction transistors with reduced base spreading resistance
复制标题
基极扩展电阻减小的多指 10 kV 级 SiC 双极结晶体管中指数对强制电流增益的影响
DOI：
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复制
发表时间：
2018
期刊：
影响因子：
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通讯作者：
and T. Kimoto
中科院分区：
文献类型：
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作者：
S. Asada;J. Suda;and T. Kimoto
