Photoreactive chemisorbed monolayer suppressing polymer dewetting in thermal nanoimprint lithography.
Photoreactive chemisorbed monolayer suppressing polymer dewetting in thermal nanoimprint lithography.
复制标题
光反应化学吸附单层抑制热纳米压印光刻中的聚合物反润湿。
作者：
H. Oda;T. Ohtake;T. Takaoka;M. Nakagawa
我们描述了反应性单层辅助热纳米压印光刻。以4-(（10-巯基）氧二苯甲酮为原料，在金薄膜上形成了紫外光照射下与热塑性聚苯乙烯接枝反应的反应性单层。光化学接枝反应抑制了改性金表面上聚苯乙烯薄膜的热致脱湿。因此，作为湿法蚀刻的抗蚀剂层的聚苯乙烯薄膜可以通过热纳米压印光刻技术进行图像化，并且可以简单地通过湿法蚀刻制备100纳米尺度的金薄膜图案。
We describe reactive-monolayer-assisted thermal nanoimprint lithography. The reactive monolayer inducing the graft reaction with thermoplastic poly(styrene) by ultraviolet light exposure was formed from 4-((10-mercaptodecyl)oxy)benzophenone on a gold thin film. The photochemical graft reaction suppressed the thermally induced dewetting of a poly(styrene) thin film on the modified gold surface. As a result, the poly(styrene) thin film used as a resist layer for wet etching could be patterned by thermal nanoimprint lithography, and 100-nm-scale patterns of a gold thin film could be prepared simply by wet etching.