High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition
High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition
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DOI：
10.1109/led.2019.2895864
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发表时间：
2019-01
影响因子：
4.9
通讯作者：
Mengfei Wang;Xuefei Li;Xiong Xiong-Xiong;Jian Song;Chengru Gu;Dan Zhan;Qianlan Hu;Shengman Li;
中科院分区：
文献类型：
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作者：
Mengfei Wang;Xuefei Li;Xiong Xiong-Xiong;Jian Song;Chengru Gu;Dan Zhan;Qianlan Hu;Shengman Li;
在聚酰亚胺衬底上制备了迁移率为${13}~\Text{cm}^{2}/\Text{V}\CDot\Text{S}$/Text{i}_{\Text{Off}}的柔性氧化锌薄膜晶体管，其迁移率为${1.5}\×{10}^{8}。其中，氧化锌沟道是在140℃下通过原子层沉积(ALD)沉积的，由于氧化铝(Al_2O_3)介质与具有陡峭界面形貌的氧化锌沟道之间具有良好的界面质量，因此获得了高的弯曲稳定性。柔性氧化锌器件在拉伸应变为0.63%的条件下弯曲20万次后仍表现出良好的电学性能。还进行了2.08%高拉应变下的电测。此外，还首次研究了拉伸应变为0.78%的柔性氧化锌薄膜晶体管在20°C到140°C温度范围内的电性能与温度的关系。
Flexible zinc oxide thin film transistors (ZnO TFTs) with a mobility of $ {13}~\text {cm}^{2}/\text {V}\cdot \text {s}$ and an I $_{\text {on}}/\text{I}_{\text {off}}$ ratio of $ {1.5}\times {10}^{8}$ have been fabricated on polyimide substrate, where the ZnO channel is deposited by atomic layer deposition (ALD) at 140 °C. High bending stability has been achieved due to excellent interface quality between alumina (Al2O3) dielectric and ZnO channel with a sharp interface topography. The flexible ZnO device exhibits excellent electrical characteristics even after being bent for 200 000 cycles with a tensile strain of 0.63%. Electrical measurement under a high tensile strain of 2.08% has also been carried out. Moreover, the electrical performance dependence of flexible ZnO TFTs with a tensile strain of 0.78% on temperature from 20 °C to 140 °C has been investigated for the first time.