Y.Yasuda et al.: "Relationship between growth processes and strain relaxation in Sil-xGex films grown on (100)Si-(2x1) surfaces by gas source molecular beam epitaxy." J.Appl.Phys.73. 2288-2293 (1993)
Y.Yasuda et al.: "Relationship between growth processes and strain relaxation in Sil-xGex films grown on (100)Si-(2x1) surfaces by gas source molecular beam epitaxy." J.Appl.Phys.73. 2288-2293 (1993)
复制标题
Y.Yasuda 等人:“通过气源分子束外延在 (100)Si-(2x1) 表面上生长的 Sil-xGex 薄膜的生长过程与应变弛豫之间的关系。”
DOI:
--
复制
发表时间:
--
期刊:
影响因子:
--
通讯作者:
中科院分区:
文献类型:
--
作者: