Influence of 1×1 defects on Schottky barrier height at the Ag/Si(111)7×7 interface
Influence of 1×1 defects on Schottky barrier height at the Ag/Si(111)7×7 interface
复制标题
1×1缺陷对Ag/Si(111)7×7界面肖特基势垒高度的影响
DOI：
10.1103/physrevb.66.073301
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发表时间：
2002
影响因子：
3.7
通讯作者：
K. Tanaka
中科院分区：
文献类型：
--
作者：
H. Hirayama;T. Yamaguchi;H. Ikezawa;K. Tanaka
研究了Si(111)7X7表面1XI缺陷对Ag/Si界面肖特基势垒高度的影响。通过高温淬火，我们有意在Si(111)7×7表面引入了i-X1缺陷。在用扫描隧道显微镜表征了1XI缺陷的面积后，我们在室温下在表面原位沉积了银膜，并测量了SBH。当1×I面积从0增加到50%时，SBH从0.60 eV增加到0.66 eV。SBH对1×1区域的依赖性是由于1×1区域的局部高SBH及其周围的夹断区所引起的。
We examined the influence of 1 X I defects at the Si(111)7X 7 surface on the Schottky barrier height (SBH) of the Ag/Si interface. By quenching samples from high temperatures, we intentionally introduced I X 1 defects on Si(111) 7 X 7 surfaces. After characterizing the area of the 1 X I defects by scanning tunneling microscope, we deposited Ag films in situ at room temperature on the surfaces and measured the SBH. As the 1 × I area increased from 0 to 50 %, SBH increased from 0.60 eV to 0.66 eV. The 1 × 1 area dependence of the SBH was caused by a locally high SBH in the 1 X 1 area with the pinch-off area extending around it.