Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer.
Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer.
复制标题
基于由离子印迹聚合物功能化的 AlGaN/GaN 高电子迁移率晶体管的高选择性和灵敏磷酸盐阴离子传感器
DOI：
10.1038/srep27728
复制
发表时间：
2016-06-09
影响因子：
4.6
通讯作者：
Zheng Y
中科院分区：
文献类型：
--
作者：
Jia X;Chen D;Bin L;Lu H;Zhang R;Zheng Y
开发了一种基于 AlGaN/GaN 高电子迁移率晶体管 (HEMT) 的新型离子印迹电化学传感器，用于检测痕量磷酸根阴离子。该传感器结合了AlGaN/GaN HEMT的离子敏感性和离子印迹聚合物的特异性识别的优点。当前的响应表明，所制造的传感器对磷酸根阴离子具有高度敏感性和选择性。电流变化与磷酸盐浓度从0.02mgL−1到2mgL−1呈近似线性相关，传感器的灵敏度和检测限分别为3.191μA/mgL−1和1.97μgL−1。结果表明，这种基于AlGaN/GaN HEMT的电化学传感器在磷酸盐阴离子检测方面具有潜在的应用前景。
A novel ion-imprinted electrochemical sensor based on AlGaN/GaN high electron mobility transistors (HEMTs) was developed to detect trace amounts of phosphate anion. This sensor combined the advantages of the ion sensitivity of AlGaN/GaN HEMTs and specific recognition of ion imprinted polymers. The current response showed that the fabricated sensor is highly sensitive and selective to phosphate anions. The current change exhibited approximate linear dependence for phosphate concentration from 0.02 mg L−1to 2 mg L−1, the sensitivity and detection limit of the sensor is 3.191 μA/mg L−1and 1.97 μg L−1, respectively. The results indicated that this AlGaN/GaN HEMT-based electrochemical sensor has the potential applications on phosphate anion detection.