Proton therapy beam dosimetry with silicon CMOS image sensors

Proton therapy beam dosimetry with silicon CMOS image sensors
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DOI：
10.1016/j.nima.2004.03.108
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发表时间：
2004-06-01
期刊：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
影响因子：
1.4
通讯作者：
Végh, J
Végh, J
中科院分区：
物理与天体物理3区
文献类型：
--
作者：
Sanchez-Crespo, A;Kerek, A;Végh, J

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使用 48、95 和 180 MeV 质子照射具有超过 100 000 像素并具有标准视频输出的 16 mm(2) CMOS 图像传感器。硅中质子引发的核反应被检测为图像中的亮点或轨迹。研究了探测器的角度和能量相关响应。讨论了质子剂量测定的应用。 (C) 2004 Elsevier B.V. 保留所有权利。
A 16 mm(2) CMOS Image Sensor with more than 100 000 pixels and with a standard video output was irradiated with 48, 95 and 180 MeV protons. Proton-induced nuclear reactions in silicon were detected as bright spots or tracks in the images. The angular and energy-dependent response of the detector were studied. The application to proton dosimetry is discussed. (C) 2004 Elsevier B.V. All rights reserved.