Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature
Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature
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DOI：
10.1063/1.4863818
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发表时间：
2014-02-03
影响因子：
4
通讯作者：
Shiraishi, Masashi
中科院分区：
文献类型：
--
作者：
Sasaki, Tomoyuki;Suzuki, Toshio;Shiraishi, Masashi
本文报道了二端结构的室温局域磁电阻效应。通过采用1.6 nm厚的MgO隧道势垒，增加了自旋注入效率，导致大的非局域磁电阻。在室温下的非本地磁阻的幅度估计为0.0057 Ω。结果，即使在室温下，在局部磁阻测量中也观察到清晰的矩形信号。我们也借由分别测量每个接点的自旋累积电压来探讨局部磁电阻的起源。(C)2014 AIP Publishing LLC.
Room temperature local magnetoresistance in two-terminal scheme is reported. By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency is increased, resulting in large non-local magnetoresistance. The magnitude of the non-local magnetoresistance is estimated to be 0.0057 Omega at room temperature. As a result, a clear rectangle signal is observed in local magnetoresistance measurement even at room temperature. We also investigate the origin of local magnetoresistance by measuring the spin accumulation voltage of each contact separately. (C) 2014 AIP Publishing LLC.