Oxygen tracer diffusion in IrO2 barrier films
Oxygen tracer diffusion in IrO2 barrier films
复制标题
IrO2 阻挡膜中的氧示踪剂扩散
DOI：
10.1063/1.1425069
复制
发表时间：
2002
影响因子：
3.2
通讯作者：
K. Samwer
中科院分区：
文献类型：
--
作者：
C. Pinnow;I. Kasko;N. Nagel;T. Mikolajick;C. Dehm;F. Jahnel;M. Seibt;U. Geyer;K. Samwer
The 18O tracer diffusion method was used to investigate oxygen diffusion in reactively dc-sputtered IrO2 films. The profile measurements were done by secondary ion mass spectrometry. For the investigation of the oxygen diffusivity in the samples a temperature range from 600 to 765 °C was chosen. The oxygen tracer diffusion in IrO2 films was found to be described by an Arrhenius law with D0=(2.8±2.5)10−6 m2 s−1 and an activation energy of Ea=(2.73±0.07) eV. It was also shown that the extrinsic oxygen diffusion is strongly influenced by the film preparation conditions, which is especially important for the application of IrO2 films as an oxygen barrier in future memory device applications.
