Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation
Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation
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垂直GaN二极管的边缘终端：二次谐波探测的电场分布
DOI：
10.1063/5.0096755
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发表时间：
2022-06-13
影响因子：
4
通讯作者：
Kuball, Martin
中科院分区：
文献类型：
--
作者：
Cao, Yuke;Pomeroy, James W.;Kuball, Martin
利用电场诱导二次谐波产生技术（EFISHG）研究了部分补偿离子注入边缘终止（ET）的GaN-on-GaN p-n二极管的电场分布。从阳极到ET外缘的分布电场证明了ET结构的有效性。然而，EFISHG也表明，它的有效性是强烈依赖于在ET的部分补偿层（PC）的受体电荷分布。通常较低量的受体电荷可从测量的电场分布推断，所述电场分布由ET制造期间过量的离子注入能量或剂量引起并导致低于最佳击穿电压。当PC层中未被注入补偿的剩余受体不均匀地分布在器件的外围时，可以观察到局部场拥挤。从这些直接电场测量中可以获得重要的信息，并用于优化器件设计和制造工艺。
We characterized the electric field distribution of GaN-on-GaN p-n diodes with partially compensated ion-implanted edge termination (ET) using an electric field induced second harmonic generation technique (EFISHG). The distributed electric field from the anode to the outer edge of the ET demonstrates the effectiveness of the ET structure. However, EFISHG also shows that its effectiveness is strongly dependent on the acceptor charge distribution in the ET's partially compensated layer (PC). A generally lower amount of acceptor charge can be inferred from the measured electric field distribution resulting from excessive ion implantation energy or dose during ET fabrication and causing lower than optimal breakdown voltage. Localized field crowding can be observed when the remaining acceptors uncompensated by the implant in the PC layer are nonuniformly distributed around the periphery of the devices. Important information can be obtained from these direct electric field measurements and used for optimizing the device design and fabrication process.