Localized induction heating solder bonding for wafer level MEMS packaging
Localized induction heating solder bonding for wafer level MEMS packaging
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DOI：
10.1088/0960-1317/15/2/020
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发表时间：
2004-09
影响因子：
2.3
通讯作者：
Hsueh-An Yang;Mingching Wu;W. Fang
中科院分区：
文献类型：
--
作者：
Hsueh-An Yang;Mingching Wu;W. Fang
本文报道了一种用于 MEMS 器件晶圆级封装的新焊接方法。使用感应加热对电镀磁性薄膜进行加热，导致焊料回流。实验结果表明，不到1分钟即可完成粘合过程。此外，MEMS器件在键合过程中的温度仅为110°C，因此薄膜材料不会受到损坏。此外，硅与硅片之间的结合强度高于18MPa。馈通线（充当接合区域的电馈通）的台阶高度由电镀膜密封。因此，通过回流焊恢复电镀表面的平坦度和粗糙度，并且可以实现用于防止漏水的封装。演示了表面微机械设备与所提出的封装技术的集成。
This paper reports a new solder bonding method for the wafer level packaging of MEMS devices. Electroplated magnetic film was heated using induction heating causing the solder to reflow. The experiment results show that it took less than 1 min to complete the bonding process. In addition, the MEMS devices experienced a temperature of only 110 °C during bonding, thus thin film materials would not be damaged. Moreover, the bond strength between silicon and silicon wafer was higher than 18 MPa. The step height of the feed-through wire (acting as the electrical feed-through of the bonded region) is sealed by the electroplated film. Thus, the flatness and roughness of the electroplated surface are recovered by the solder reflow, and the package for preventing water leakage can be achieved. The integration of the surface micromachined devices with the proposed packaging techniques was demonstrated.