Manifestation of magnetically induced spatial dispersion in the cubic semiconductors ZnTe, CdTe, and GaAs
Manifestation of magnetically induced spatial dispersion in the cubic semiconductors ZnTe, CdTe, and GaAs
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立方半导体 ZnTe、CdTe 和 GaAs 中磁致空间色散的表现
DOI：
10.1134/1.568066
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
H. Weber
中科院分区：
文献类型：
--
作者：
B. Krichevtsov;R. Pisarev;A. Rzhevskii;H. Weber
在TD类立方半导体中，由于磁致空间色散，在基频吸收边附近观察到了非互易双折射现象。确定了描述Bikj型项对介电张量εij(ω，B，k)的对角和非对角分量贡献的参数A和g的色散。对非互易双折射的色散和各向异性的分析表明，与CD1−xMnxTe磁性半导体相比，在ZnTe、CdTe和GaAs中的双折射是激子机制所致。
Nonreciprocal birefringence due to magnetically induced spatial dispersion was observed in the Td-class cubic semiconductors ZnTe, CdTe, and GaAs near the fundamental absorption edge. The dispersion of the parameters A and g, describing the contributions from terms of the type Bikj to the diagonal and off-diagonal components of the permittivity tensor εij(ω,B,k), is determined for ZnTe and CdTe. Analysis of the dispersion and anisotropy of the nonreciprocal birefringence shows that in ZnTe, CdTe, and GaAs, in contrast to magnetic semiconductors of the type Cd1−xMnxTe, it is due excitonic mechanisms.