Preparations and Evaluations of C60 Thin Films for Organic Field-Effect Transistors
Preparations and Evaluations of C60 Thin Films for Organic Field-Effect Transistors
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有机场效应晶体管用C60薄膜的制备与评价
DOI：
10.1143/jjap.44.617
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发表时间：
2005
影响因子：
1.5
通讯作者：
H. Yamamoto
中科院分区：
文献类型：
--
作者：
N. Iwata;Akane Kinjo;H. Okuyama;H. Yamamoto
为了制备高性能的有机场效应晶体管（FET），在云母顶栅型衬底和CaF 2/Si（111）底栅型衬底上生长了富勒烯C60薄膜。由于在晶界处缺乏用于传导电子的势垒，因此预期具有大晶粒的单晶C60薄膜具有作为n型材料的高迁移率。在这两种基板上，取向的C60膜获得。特别是，在云母基底上，高度取向的膜具有大于1×1 μm的晶粒和具有60和120度小平面的二维平坦表面。台阶高度为0.8 nm，与hcp体结构一致。高度取向的薄膜生长在衬底温度下，在该温度下，螺旋颗粒尖端的C60分子再蒸发。所获得的大晶粒单晶C60薄膜在高性能有机场效应晶体管中具有很好的应用前景。
Fullerene C60 thin films were grown on a mica top-gate-type substrate and on a CaF2∥Si(111) bottom-gate-type substrate with the aim of fabricating high-performance organic field-effect transistors (FETs). It is expected that single-crystal C60 thin films with a large grain have a high mobility as n-type materials because of the lack of a potential barrier at the grain boundaries for conducting electrons. On both substrates, oriented C60 films were obtained. In particular, on the mica substrate, the highly oriented films had grains larger than 1×1 µm and a two-dimensionally flat surface with 60 and 120 deg facets. The step height was 0.8 nm, consistent with that of an hcp bulk structure. The highly oriented films were grown at the substrate temperature at which the C60 molecules at the tips of spiral grains re-evaporated. The obtained single-crystal C60 thin films with large grains are promising for high-performance organic FETs.