Observation of large electron drift velocities in InN by ultrafast Raman spectroscopy - art. no. 222103
Observation of large electron drift velocities in InN by ultrafast Raman spectroscopy - art. no. 222103
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DOI：
10.1063/1.1931048
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发表时间：
2005-05-30
影响因子：
4
通讯作者：
Schaff, WJ
中科院分区：
文献类型：
--
作者：
Tsen, KT;Poweleit, C;Schaff, WJ
用瞬态拉曼光谱研究了在T=300 K时生长在GaN上的InN薄膜中的电子输运。我们的实验结果表明，在亚皮秒激光激发和探测下，伽马谷载流子的电子漂移速度可以超过稳态值高达40%。发现电子速度在2x10(8) cm/s左右切断，明显大于其他III-V半导体，如GaAs和InP。将实验结果与集合蒙特卡罗模拟结果进行了比较，得到了较好的一致性。(c) 2005年美国物理研究所。
Electron transport in an InN film grown on GaN has been studied by transient Raman spectroscopy at T=300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity of carriers in the Gamma valley can exceed its steady-state value by as much as 40%. Electron velocities have been found to cut off at around 2x10(8) cm/s, significantly larger than those observed for other III-V semiconductors, such as GaAs and InP. These experimental results have been compared with ensemble Monte Carlo simulations and good agreement has been obtained. (c) 2005 American Institute of Physics.