Polarity determination of InN by wet etching
Polarity determination of InN by wet etching
复制标题
DOI：
10.1002/pssa.200461439
复制
发表时间：
2005-04
期刊：
影响因子：
--
通讯作者：
D. Muto;T. Araki;H. Naoi;Fumie Matsuda;Y. Nanishi
中科院分区：
文献类型：
--
作者：
D. Muto;T. Araki;H. Naoi;Fumie Matsuda;Y. Nanishi
我们首次成功地用KOH溶液湿法腐蚀区分了InN的极性。结果表明，N极性InN在刻蚀60 min后出现了{10 $\bar 1$}面包围的六棱锥，刻蚀粗糙; In极性InN在较短时间内刻蚀光滑。观察到的这些特征与GaN的报道非常相似。然而，在暴露于KOH溶液超过60分钟的较长时间后，在In-polar InN的表面上出现六边形和点状蚀刻坑。六边形和点型蚀坑的密度分别为3 × 10 ~ 5 × 109 cm ~（-2）和1 × 10 ~ 3 × 1010 cm ~（-2）。由于这些蚀坑的密度几乎对应于InN的位错密度，因此认为蚀坑的形成与穿透位错有关。在本研究中，还首次发现使用低温GaN缓冲层在（0001）蓝宝石衬底上生长的InN层具有In极性。（© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
We have succeeded in distinguishing the polarities of InN by wet etching using KOH solution for the first time. We found N‐polar InN was etched roughly, and hexagonal pyramids surrounded by {10$\bar 1 \bar 1$} facets appeared after etching for 60 min. On the other hand, In‐polar InN was etched smoothly in shorter term of etching. These features observed are very similar to those reported for GaN. After longer term of exposure to the KOH solution over 60 min, however, hexagonal and dot type etch pits appeared on the surface of In‐polar InN. The densities of hexagonal and dot type etch pits were 3 ∼ 5 × 109 cm–2 and 1 ∼ 3 × 1010 cm–2, respectively. Since the densities of these etch pits almost correspond to the dislocation densities of InN, it is considered that the etch pit formation is related to the threading dislocations. In this study, it was also found for the first time that InN layers grown on (0001) sapphire substrates using a low‐temperature GaN buffer layer had In‐polarity. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)