EFFECT OF CRYSTAL-GROWTH CONDITIONS ON CHARGE-DENSITY-WAVE PINNING IN NBSE3
EFFECT OF CRYSTAL-GROWTH CONDITIONS ON CHARGE-DENSITY-WAVE PINNING IN NBSE3
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DOI：
10.1103/physrevb.45.5804
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发表时间：
1992-03-15
影响因子：
3.7
通讯作者：
THORNE, RE
中科院分区：
文献类型：
--
作者：
THORNE, RE
我描述了蒸气传输生长条件对 NbSe3 性能影响的系统研究。 未有意掺杂的 NbSe3 中电荷密度波 (CDW) 的钉扎主要是由杂质而非本征缺陷引起的。 这些杂质的大部分可能源自除Nb和Se起始材料之外的来源。 起始 Nb 和 Se 中存在的氧会吸收所有来源的杂质，包括有意添加的杂质。 因此，传输晶体中的杂质类型和浓度可能与起始材料中的杂质类型和浓度显着不同。 我描述了对掺杂进行合理控制的生长过程，并产生高质量的 NbSe3 晶体，其残余电阻比 r(R) 约为 400，体阈值电场 E(T)(T = 50 K) < 1 mV/cm。 这些结果有助于解释 NbSe3 中 CDW 钉扎的先前研究之间的巨大不一致。
I describe a systematic study of the effects of vapor-transport growth conditions on the properties of NbSe3. Pinning of charge-density waves (CDW's) in NbSe3 that is not intentionally doped is primarily by impurities rather than by intrinsic defects. A substantial fraction of these impurities may be derived from sources other than the Nb and Se starting materials. Oxygen, which is present in the starting Nb and Se, getters impurities from all sources, including those which are intentionally added. Consequently, impurity types and concentrations in transported crystals may differ significantly from those in the starting materials. I describe growth procedures that provide reasonable control over doping, and that yield high-quality NbSe3 crystals with residual resistance ratios r(R) approximately 400 and bulk threshold electric fields E(T)(T = 50 K) < 1 mV/cm. These results help to explain large inconsistencies between previous studies of CDW pinning in NbSe3.