INITIAL STAGES IN THE CARBONIZATION OF (111)SI BY SOLID-SOURCE MOLECULAR BEAM EPITAXY
INITIAL STAGES IN THE CARBONIZATION OF (111)SI BY SOLID-SOURCE MOLECULAR BEAM EPITAXY
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固源分子束外延 (111)Si 碳化的初始阶段
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
J. Schaefer
中科院分区：
文献类型：
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作者：
V. Cimalla;T. Stauden;G. Ecke;F. Scharmann;G. Eichhorn;J. Pezoldt;S. Sloboshanin;J. Schaefer
通过在分子束外延中使用元素固体碳源进行碳化，可以在低于 600°C 的温度下在 (111)Si 上重复生长碳化硅。通过原位反射高能电子衍射观察了初始阶段。在碳化硅生长之前，连续的碳通量导致从干净的 (111)Si 的 (7×7) 重建转变为碳诱导的 (∛×∛)R30° 结构。高于 660°C，碳化硅通过三维成核直接在硅表面开始生长。在低于 660°C 时，首先通过碳扩散到该区域附近的表面形成薄硅碳合金，其浓度超过硅的体积溶解度。
Silicon carbide can be reproducibly grown on (111)Si below 600 °C by carbonization using an elemental solid carbon source in molecular beam epitaxy. The initial stages were observed by in situ reflection high-energy electron diffraction. Prior to silicon carbide growth, the continuous carbon flux lead to a transition from the (7×7) reconstruction of clean (111)Si to a carbon-induced (∛×∛)R30° structure. Above 660 °C, the silicon carbide growth starts directly on the silicon surface via three-dimensional nucleation. Below 660 °C, first a thin silicon–carbon alloy was formed by diffusion of carbon into the surface near the region with a concentration exceeding the bulk solubility in silicon.