RF‐MBE growth and structural characterization of cubic InN films on GaAs
RF‐MBE growth and structural characterization of cubic InN films on GaAs
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DOI：
10.1002/pssb.200565376
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发表时间：
2006-06
期刊：
影响因子：
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通讯作者：
T. Nakamura;K. Iida;R. Katayama;Takahisa Yamamoto;K. Onabe
中科院分区：
文献类型：
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作者：
T. Nakamura;K. Iida;R. Katayama;Takahisa Yamamoto;K. Onabe
利用射频等离子体辅助分子束外延技术，在GaAs（001）衬底上成功地生长了c‐InN（锌闪锌矿结构）薄膜。X射线衍射分析证实了c - InN薄膜的生长，其生长温度为400-550℃。In -富侧近表面化学计量的生长条件明显改善了InN薄膜的结构性能（即表面平整度和晶体质量）。通过高分辨率透射电镜图像和2θ/ω X射线互易空间映射测量，发现六方相InN （h‐InN）是由c‐InN{111}面产生的。根据对X射线衍射强度的分析，估计c‐InN的体积含量最高可达~ 82%。（©2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim）
c‐InN (zincblende structure) films have been successfully grown on GaAs(001) substrates by rf‐plasma‐assisted molecular beam epitaxy. The X‐ray diffraction analysis has confirmed the growth of c‐InN films whose growth temperature was 400–550 °C. The structural properties (i.e. surface flatness and crystal quality) of the InN films are obviously improved for the growth condition of the near surface‐stoichiometry at the In‐rich side. By high resolution transmission electron microscopy images and 2θ/ω X‐ray reciprocal space mapping measurements, hexagonal‐phase InN (h‐InN) is found to be generated from c‐InN{111} facets. The volume content of c‐InN is estimated to be ∼82% at maximum based on an analysis of the X‐ray diffraction intensity. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)