Resonant Raman scattering in semiconductors
Resonant Raman scattering in semiconductors
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半导体中的共振拉曼散射
DOI：
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发表时间：
1976
期刊：
影响因子：
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通讯作者：
W. Richter
中科院分区：
文献类型：
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作者：
W. Richter
拉曼张量（跃迁极化率）包含两个基本信息：电子带间跃迁的偶极矩阵元和态密度以及电子-声子耦合参数。前者的信息也包含在光学常数中，并且可以更容易地从透射率或反射率测量中获得。此外，为了从实验中提取散射截面并解释散射过程，几乎总是需要光学常数。
The Raman tensor (transition susceptibility) contains two basic pieces of information: the dipole matrix elements and density of states of electronic interband transitions and the electron-phonon coupling parameter. The former information is also contained in the optical constants and can be obtained much more easily from transmission or reflectivity measurements. Also, in order to extract the scattering cross section from experiment and to interpret the scattering process, the optical constants are nearly always required.