Surface-plasmon-enhanced light emitters based on InGaN quantum wells
Surface-plasmon-enhanced light emitters based on InGaN quantum wells
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DOI：
10.1038/nmat1198
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发表时间：
2004-09-01
期刊：
影响因子：
41.2
通讯作者：
Scherer, A
中科院分区：
文献类型：
--
作者：
Okamoto, K;Niki, I;Scherer, A
自1993年以来，InGaN发光二极管（LED）已经得到改进和商业化，但这些器件并没有实现其作为灯泡的固态替代品的最初承诺，因为它们的发光效率受到限制。在这里，我们描述了一种方法，以提高这一效率，通过量子威尔斯（QW）和表面等离子体（SP）之间的能量转移。SPs可以增加半导体中的态密度和自发辐射率，并导致SP-QW耦合的光发射增强。当在InGaN发光层上方10 nm处沉积银或铝层时，测量到内部量子效率（ηint）的大的增强，而从金涂覆的样品中没有获得这样的增强。我们的研究结果表明，使用SP将导致一类新的非常明亮的LED和高效的固态光源。
Since 1993, InGaN light-emitting diodes (LEDs) have been improved and commercialized,, but these devices have not fulfilled their original promise as solid-state replacements for light bulbs as their light-emission efficiencies have been limited. Here we describe a method to enhance this efficiency through the energy transfer between quantum wells (QWs) and surface plasmons (SPs). SPs can increase the density of states and the spontaneous emission rate in the semiconductor,,,,,,, and lead to the enhancement of light emission by SP–QW coupling,. Large enhancements of the internal quantum efficiencies (ηint) were measured when silver or aluminium layers were deposited 10 nm above an InGaN light-emitting layer, whereas no such enhancements were obtained from gold-coated samples. Our results indicate that the use of SPs would lead to a new class of very bright LEDs, and highly efficient solid-state light sources.