Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion
Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion
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DOI：
10.1063/1.118504
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发表时间：
1997-03-03
影响因子：
4
通讯作者：
Hasenberg, TC
中科院分区：
文献类型：
--
作者：
Jang, DJ;Olesberg, JT;Hasenberg, TC
我们将亚皮秒光致发光上转换技术扩展到中波红外光谱区，并使用该系统研究窄带隙 (2.32 μ m) (GaInSb/InAs)/GaInAlAsSb 超晶格多量子阱中热光注入电子空穴对的能量弛豫。这些和类似的结构目前作为中波红外二极管激光器的有源区域而受到关注。测量结果表明，注入近 1 eV 过剩能量的载流子可以通过激发后 2 ps 内井中的热热化分布得到很好的描述。对于 10(17) cm(-3) 的载流子密度，光学声子发射冷却基本上在注入后 15 ps 内完成。通过拟合载流子温度的时间依赖性，我们估计有效的载流子光学声子散射时间为 1.2 ps。 (C) 1997 年美国物理研究所。
We have extended the technique of subpicosecond photoluminescence upconversion to the mid-wave infrared spectral region and have used this system to investigate the energy relaxation of hot, optically injected electron-hole pairs in a narrow-band-gap (2.32 mu m) (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well. These and similar structures are currently of interest as the active region for mid-wave infrared diode lasers. The measurements demonstrate that carriers, which are injected with nearly 1 eV of excess energy, are well described by a hot, thermalized distribution in the wells within 2 ps after excitation. For a carrier density of 10(17) cm(-3), cooling by optical phonon emission is essentially complete 15 ps after injection. By fitting the time dependence of the carrier temperature, we estimate an effective carrier-optical-phonon scattering time of 1.2 ps. (C) 1997 American Institute of Physics.