Fabrication of multilayered structure of silver nanorod arrays for plasmon memory
Fabrication of multilayered structure of silver nanorod arrays for plasmon memory
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DOI：
10.1016/j.mee.2018.02.020
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发表时间：
2018-06-05
影响因子：
2.3
通讯作者：
Taniguchi, Jun
中科院分区：
文献类型：
--
作者：
Wadayama, Hisahiro;Okabe, Takao;Taniguchi, Jun
近年来，已经研究了许多利用等离子体激元共振的装置。在各种等离子体激元器件中，下一代等离子体激元存储器预计将是三维光学存储介质。等离子体激元存储器是其中堆叠金属纳米棒层和树脂层的三维结构。预计这将比传统的光学存储介质具有更大的容量。通常，金属纳米结构可以通过使用电子束光刻、金属沉积和剥离工艺来制造。通过重复该过程，可以制造三维结构。然而，由于电子束光刻和金属沉积在真空中进行，等离子体激元存储器的制造需要相当长的时间。因此，等离子体存储器的生产率非常低。在我们之前的研究中，我们开发了一种可以在环境气氛中通过纳米压印光刻（NIL）和银油墨而不是电子束光刻和金属沉积来制造的工艺。使用NIL（一种高通量纳米图案制造方法）和银墨（其可以在环境气氛中使用）允许高效地生产金属图案。因此，与通常的过程相比，该过程可以缩短所需的时间。另外，为了作为等离子体存储器操作，需要使每层的金属纳米结构对准。在这项研究中，我们开发了一种对准标记，适用于使用银油墨的NIL和金属纳米结构制造。通过在通过光学显微镜观察的同时定位对准标记，对准金属纳米结构并且制造三层银图案化纳米棒结构。在垂直方向上，未对准被抑制到230 nm，在横向方向上，未对准被抑制到320 nm。(C)2018爱思唯尔B.V.保留所有权利。
In recent years, many devices utilizing plasmon resonance have been studied. Among the various plasmonic devices, the next generation of plasmon memory is expected to be a three-dimensional optical storage media. The plasmon memory is a three-dimensional structure in which a metal nanorod layer and a resin layer are stacked. This is expected to have more capacity than conventional optical storage media. Generally, metal nanostructures can be fabricated by using electron beam lithography, metal deposition, and lift-off processes. By repeating this process, the three-dimensional structure can be fabricated. However, because the electron beam lithography and metal deposition are conducted in a vacuum, the fabrication of plasmon memory requires considerable time. Thus, the productivity of the plasmon memory is very low. In our previous research, we developed a process that can be fabricated in ambient atmosphere by nanoimprint lithography (NIL) and silver ink instead of electron beam lithography and metal deposition. Using NIL, a high throughput nanopattern fabrication method, and silver ink, which can be used in ambient atmosphere, allows for highly efficient production of metal patterns. Thus, this process can shorten the time required compared to the usual process. Additionally, in order to operate as a plasmon memory, it is necessary to align the metal nanostructure for each layer. In this study, we developed an alignment mark suitable for NIL and metal nanostructure fabrication using silver ink. By positioning the alignment mark while looking through an optical microscope, the metal nanostructure was aligned and a three-layer silver patterned nanorod structure was fabricated. The misalignment was suppressed to 230 nm in the vertical direction and 320 nm in the lateral direction. (C) 2018 Elsevier B.V. All rights reserved.