Intrinsic Hall effect and separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells
Intrinsic Hall effect and separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells
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DOI：
10.1088/1009-1963/15/12/041
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发表时间：
2006-12
期刊：
影响因子：
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通讯作者：
Hong-Zhou Song;Zhang Ping;Su-Qing Duan;Xian-Geng Zhao
中科院分区：
文献类型：
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作者：
Hong-Zhou Song;Zhang Ping;Su-Qing Duan;Xian-Geng Zhao
我们提出了一种利用本征霍尔效应分离半导体量子阱中Rashba和Dresselhaus自旋分裂的方法。结果表明，Rashba项和Dresselhaus项之间的干涉可以使宏观霍尔电流中的电子在相反的横向方向上发生偏转，并改变其符号，从而为确定自旋轨道耦合的不同贡献提供了另一种方法。
We have proposed a method to separate Rashba and Dresselhaus spin splittings in semiconductor quantum wells by using the intrinsic Hall effect. It is shown that the interference between Rashba and Dresselhaus terms can deflect the electrons in opposite transverse directions with a change of sign in the macroscopic Hall current, thus providing an alternative way to determine the different contributions to the spin–orbit coupling.