Electronic Biosensors Based on III-Nitride Semiconductors
Electronic Biosensors Based on III-Nitride Semiconductors
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DOI：
10.1146/annurev-anchem-071114-040247
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发表时间：
2015-01-01
期刊：
影响因子：
--
通讯作者：
Ivanisevic, Albena
中科院分区：
文献类型：
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作者：
Kirste, Ronny;Rohrbaugh, Nathaniel;Ivanisevic, Albena
综述了AlGaN/GaN高电子迁移率晶体管（HEMT）电子生物传感器的最新研究进展。我们讨论了III族氮化物为基础的生物传感器的性能和制造。由于其上级生物相容性和水稳定性，GaN基器件准备作为下一代生物传感器实施。我们回顾表面特性，清洁，钝化以及不同的途径功能化，并严格分析III-氮化物为基础的生物传感器在文献中证明，包括那些检测DNA，细菌，癌症抗体和毒素。我们还讨论了这些生物传感器用于监测活心脏，成纤维细胞和神经细胞的高潜力。最后，我们报告目前的发展共价化学功能化的III族氮化物器件。我们的审查结论与GaN基HEMT生物传感器的未来挑战和预计的实施方向的简短展望。
We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.