Negative differential resistance in three terminal photodetectors
Negative differential resistance in three terminal photodetectors
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DOI：
10.1063/1.4954699
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发表时间：
2016-06-20
影响因子：
4
通讯作者：
Eisenstein, G.
中科院分区：
文献类型：
--
作者：
Mikhelashvili, V.;Meyler, B.;Eisenstein, G.
本文描述了一种制作在绝缘体上硅衬底上的三端（类晶体管）光电探测器，它在从紫外到近红外的宽光谱范围内具有高响应度。即使在-0.15V和+1V的低栅漏电压下，其响应度在315 nm处为0.5A/W，在455 nm处为0.63A/W，在880 nm处为0.26A/W。此外，该器件表现出负微分电阻（由于嵌入在栅极电介质中的Pt纳米颗粒），在黑暗中具有60的大峰谷电流比，在照明下高达140。这些值比在基于异质结构或具有引起能带或共振隧穿的极高掺杂区的结构的替代的二或三端子系统中获得的值大几倍。由AIP出版社出版。
A three terminal (transistor-like) photodetector fabricated on a silicon-on-insulator substrate with a high responsivity over a wide spectral range from ultraviolet to the near infrared is described. Even for low gate and drain voltages of -0.15V and +1V, respectively, its responsivity is 0.5 A/W at 315 nm, 0.63 A/W at 455 nm, and 0.26 A/W at 880 nm. Moreover, the device exhibits a negative differential resistance (due to Pt nano particles which are embedded within the gate dielectric) with large peak-to-valley current ratios of 60 in the dark and up to 140 under illumination. These values are several times larger than those obtained in alternative two or three terminal systems which are based on heterostructures or structures with extremely high doping regions that cause band-banding or resonant tunneling. Published by AIP Publishing.