Designing Nanomagnet Arrays for Topological Nanowires in Silicon
Designing Nanomagnet Arrays for Topological Nanowires in Silicon
复制标题
设计硅拓扑纳米线的纳米磁体阵列
DOI：
10.1103/physrevapplied.10.054071
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发表时间：
2018
影响因子：
4.6
通讯作者：
Tzu
中科院分区：
文献类型：
--
作者：
Leon Maurer;John King Gamble;Lisa A Tracy;Serena Eley;Tzu
最近对拓扑量子计算的兴趣推动了对拓扑纳米线的研究，拓扑纳米线是支持包括马约拉纳费米子在内的拓扑模式的一维量子线。大多数拓扑纳米线设计依赖于与超导体结合使用的具有强自旋轨道耦合的材料，例如InAs或InSb。由于硅的技术成熟，利用硅来制备拓扑纳米线具有很大的优势。然而，Si中的本征自旋轨道耦合很弱。一种可以避免这种材料缺陷的方法是使用纳米磁体旋转电子自旋。在这里，我们进行详细的模拟现实的Si/SiGe系统与人工自旋轨道间隙由纳米磁体阵列引起的。我们的大部分结果也可推广到其他基于纳米磁体的拓扑纳米线设计。通过研究几个具体的例子，我们深入了解纳米磁体阵列的影响，导致设计规则和指导方针。最后，我们提出了一个实验上可实现的设计，使用单一的极化磁铁。
Recent interest in topological quantum computing has driven research into topological nanowires, one-dimensional quantum wires that support topological modes including Majorana fermions. Most topological nanowire designs rely on materials with strong spin-orbit coupling, such as InAs or InSb, used in combination with superconductors. It would be advantageous to fabricate topological nanowires using Si owing to its mature technology. However, the intrinsic spin-orbit coupling in Si is weak. One approach that could circumvent this material deficiency is to rotate the electron spins using nanomagnets. Here, we perform detailed simulations of realistic Si/SiGe systems with an artificial spin-orbit gap induced by a nanomagnet array. Most of our results are also generalizable to other nanomagnet-based topological nanowire designs. By studying several concrete examples, we gain insight into the effects of nanomagnet arrays, leading to design rules and guidelines. Finally, we present an experimentally realizable design using magnets with a single polarization.