Polarity dependence of AlN {0001} decomposition in flowing H2
Polarity dependence of AlN {0001} decomposition in flowing H2
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DOI：
10.1016/j.jcrysgro.2007.04.005
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发表时间：
2007-07-15
影响因子：
1.8
通讯作者：
Koukitu, Akinori
中科院分区：
文献类型：
--
作者：
Kumagai, Yoshinao;Akiyama, Kazuhiro;Koukitu, Akinori
在 100 至 1400 摄氏度的温度范围内，在各种气流（He、H-2 和 H-2 + NH3）中研究了在 (0 0 0 1) 蓝宝石衬底上生长的 Al 极性和 N 极性 AIN 层的热稳定性。 AIN在H i 流中发生分解，在He 或H-2 + NH 3 流中不发生分解。 H中的分解速率随着温度超过1200℃的升高而增加，并且发现在每个温度下M极性AlN层的分解速率低于N极性AlN层的分解速率。讨论了AlN的分解反应以及AlN层的极性与其不同分解速率之间的关系。 (c) 2007 Elsevier B.V. 保留所有权利。
The thermal stabilities of Al- and N-polarity AIN layers grown on (0 0 0 1) sapphire substrates were investigated at temperatures ranging from I 100 to 1400 degrees C in various gas flows (He, H-2 and H-2 + NH3). Decomposition of AIN occurred in flowing H,, while it did not occur in He or H-2 + NH3 flow. The decomposition rate in H, increased with an increase in the temperature over 1200 degrees C, and the decomposition rate of the M-polarity AIN layer was found to be lower than that of the N-polarity AIN layer at each temperature. The decomposition reaction of AIN and the relationship between the polarities of the AIN layers and their different decomposition rates are discussed. (c) 2007 Elsevier B. V. All rights reserved.