Computer Simulation Study on Incident Fluence Dependence of Ion Reflection and Sputtering Processes from Layered and Mixed Materials
Computer Simulation Study on Incident Fluence Dependence of Ion Reflection and Sputtering Processes from Layered and Mixed Materials
复制标题
层状和混合材料离子反射和溅射过程的入射注量依赖性的计算机模拟研究
DOI：
10.1143/jjap.40.6581
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发表时间：
2001
影响因子：
1.5
通讯作者：
K. Ohya
中科院分区：
文献类型：
--
作者：
Retsuo Kawakami;K. Ohya
用动态蒙特卡罗程序EDDY模拟了D离子在W层C材料、W层C材料和W_xC_（1-x）混合材料上的反射和溅射与注量的关系。通量依赖的深度剖面分布解释了这种通量依赖性。对于层状材料，反射和溅射的注量变化依赖于层厚度。特别是，对于C层的厚度平行的平均离子范围的影响纯C，溅射的C层的增强与增加的注量由C发射由于反射散射碰撞的D与W的表面附近。这主要是由于W和C之间的大的目标质量差，这也导致了混合材料的注量变化。由于C在混合材料中的动力学行为，C溅射被抑制，而反射和W溅射被增强。
The fluence dependence of D ion reflection and sputtering from C-layered W material, W-layered C material and WxC1-x mixed material, has been demonstrated using the dynamic Monte Carlo program, EDDY. The fluence-dependent depth profile distributions explain such fluence dependence. For the layered materials, the fluence variations of reflection and sputtering are dependent on layer thickness. In particular, for the C layer thickness parallel to the mean ion range for the impact to pure C, the sputtering of the C layer is enhanced with increasing fluence by C emission due to the reflective scattering collisions of D with W near the surface. This is essentially due to the large target mass difference between W and C, which also brings about the fluence variations for the mixed material. The C sputtering is suppressed due to the dynamic behavior of C in the mixed material, whereas the reflection and W sputtering are enhanced.