InP HBT Technologies for THz Integrated Circuits
InP HBT Technologies for THz Integrated Circuits
复制标题
DOI：
10.1109/jproc.2017.2692178
复制
发表时间：
2017-05
影响因子：
20.6
通讯作者：
M. Urteaga;Z. Griffith;M. Seo;J. Hacker;M. Rodwell
中科院分区：
文献类型：
--
作者：
M. Urteaga;Z. Griffith;M. Seo;J. Hacker;M. Rodwell
高度规模化的磷化铟(InP)异质结双极晶体管(HBT)技术已经被证明，其最高振荡频率(Fmax)为1太赫兹，电路工作已扩展到太赫兹(THz)频段的低端。InP HBT具有高射频(RF)输出功率密度、毫伏(MV)阈值一致性和高集成度。与多层薄膜布线的集成使紧凑型和复杂的太赫兹单片集成电路(TMIC)得以实现。InP HBT技术报告的电路结果包括：210 GHz 200兆瓦功率放大器、670 GHz放大器和基波振荡器，以及完全集成的600 GHz发射机电路。我们回顾了具有太赫兹能力的InP HBT器件和集成电路(IC)技术的最新进展。在扩展晶体管带宽和太赫兹频率下的电路设计方面的挑战也将被解决。
Highly scaled indium phosphide (InP) heterojunction bipolar transistor (HBT) technologies have been demonstrated with maximum frequencies of oscillation ( $f_{\max}$ ) of >1 THz and circuit operation has been extended into the lower end of the terahertz (THz) frequency band. InP HBTs offer high radio-frequency (RF) output power density, millivolt (mV) threshold uniformity, and high levels of integration. Integration with multilevel thin-film wiring permits the realization of compact and complex THz monolithic integrated circuits (TMICs). Circuit results reported from InP HBT technologies include: 200-mW power amplifiers at 210 GHz, 670-GHz amplifiers and fundamental oscillators, and fully integrated 600-GHz transmitter circuits. We review the state of the art in THz-capable InP HBT devices and integrated circuit (IC) technologies. Challenges in extending transistor bandwidth and in circuit design at THz frequencies will also be addressed.