Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution
Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution
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DOI：
10.7567/jjap.53.06jf03
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发表时间：
2014-05
影响因子：
1.5
通讯作者：
Daichi Marui;A. Ikeda;K. Nishi;H. Ikenoue;T. Asano
中科院分区：
文献类型：
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作者：
Daichi Marui;A. Ikeda;K. Nishi;H. Ikenoue;T. Asano
我们发现，通过将准分子激光照射到浸入氯化铝溶液中的4H-SiC，可以将铝掺杂到4H-SiC中。铝以接近表面的浓度超过 1 × 1020 cm−3 引入到 SiC 中，而氯几乎不扩散到 4H-SiC 中。在氯化铝溶液中进行激光照射后，激光照射区域的电阻随着激光能量密度的增加而减小。霍尔效应测量表明，激光照射产生p型层，其片状载流子浓度为2.14×1011 cm−2。此外，我们还通过对n型4H-SiC表面进行掺杂和铝掺杂来生产pn结。 pn结具有整流特性，其开/关比约为7十进制，理想因子为1.15。该技术是 SiC 局部掺杂技术的有力候选者之一。
We have found that aluminum doping into 4H-SiC is performed by irradiating excimer laser light to 4H-SiC immersed in aluminum chloride solution. Aluminum is introduced in SiC at the concentration of over 1 × 1020 cm−3 near the surface while, chlorine hardly diffuses into 4H-SiC. After the laser irradiation in aluminum chloride solution, the resistance of the laser-irradiated region decreases with increasing laser fluence. Hall effect measurement shows that the laser irradiation produces a p-type layer and that its sheet carrier concentration is 2.14 × 1011 cm−2. In addition, we produce a pn junction by doping the surface of n-type 4H-SiC and by aluminum doping. The pn junction shows rectifying characteristics whose on/off ratio is about 7 decades and ideality factor is 1.15. This technique is one of the strong candidate local doping techniques for SiC.