Experimental determination of self-heating in submicrometer MOS transistors operated in a liquid-helium ambient
Experimental determination of self-heating in submicrometer MOS transistors operated in a liquid-helium ambient
复制标题
液氦环境中亚微米 MOS 晶体管自热的实验测定
DOI：
10.1109/55.215141
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发表时间：
1993
影响因子：
4.9
通讯作者：
G. Declerck
中科院分区：
文献类型：
--
作者：
E. Gutiérrez;L. Deferm;G. Declerck
通过测量器件附近的硅温度\(T_{Si}\)，在液氦温度及不同偏置条件下工作的亚微米CMOS晶体管的自热（SH）现象得到了实验验证。\(T_{Si}\)是通过使用一个硅电阻来测量的，该电阻作为温度传感器放置在被测器件附近的同一硅片中。研究发现，CMOS反相器结构中的NMOS晶体管产生的热量会深入穿透衬底，并极大地降低n阱阻抗，导致相邻PMOS晶体管的\(I_{漏极}-V_{漏极}\)特性曲线的扭折发生很大变化。实验结果证实，在对低温器件的工作进行特性描述和建模时，绝不能低估自热效应。
Self-heating (SH) in submicrometer CMOS transistors operated at liquid-helium temperature and under different bias conditions was experimentally verified by measuring the temperature T/sub Si/ in the proximity of the device. T/sub Si/ was measured by using a silicon resistor, placed in the same bulk nearby the device under test, as a temperature sensor. It was found that the heat generated by the NMOS transistor of a CMOS inverter structure penetrates deep into the substrate and reduces very strongly the n-well impedance, giving rise to large variations in the kink of the I/sub drain/-V/sub drain/ characteristics of the neighbor PMOS transistor. Experimental results confirm that SH must not be underestimated when characterizing and modeling low-temperature device operation.<<ETX>>