Effect of Mn and Mg dopants on vacancy defect formation in ammonothermal GaN
Effect of Mn and Mg dopants on vacancy defect formation in ammonothermal GaN
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DOI：
10.1016/j.jcrysgro.2020.125803
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发表时间：
2020-10-01
影响因子：
1.8
通讯作者：
Tuomisto, F.
中科院分区：
文献类型：
--
作者：
Heikkinen, T.;Pavlov, J.;Tuomisto, F.
本文应用正电子湮没谱研究了氨法生长的掺Mg和Mn的GaN晶体中Ga空位缺陷的形成。我们发现，Mn掺杂对Ga空位的形成几乎没有影响，而Mg掺杂强烈抑制它们的形成，尽管这两种掺杂剂导致高电阻材料。我们认为这些差异主要是由于氢-掺杂剂的相互作用。进一步的研究需要绘制一个详细的原子尺度的现象在合成氨GaN的图片。
We have applied positron annihilation spectroscopy to study the formation of Ga vacancy related defects in Mg and Mn doped bulk GaN crystals grown by the ammonothermal method. We show that Mn doping has little or no effect on the formation of Ga vacancies, while Mg doping strongly suppresses their formation, in spite of both dopants leading to highly resistive material. We suggest the differences are primarily due to the hydrogen-dopant interactions. Further investigations are called for to draw a detailed picture of the atomic scale phe-nomena in the synthesis of ammonothermal GaN.