Enhancing dielectric-silicon interfaces through surface electric fields during firing
Enhancing dielectric-silicon interfaces through surface electric fields during firing
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DOI：
10.1016/j.solmat.2024.112799
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发表时间：
2024-06
影响因子：
6.9
通讯作者：
R. S. Bonilla;Isabel Al-Dhahir;Xinya Niu;P.P. Altermatt;Phillip Hamer
中科院分区：
文献类型：
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作者：
R. S. Bonilla;Isabel Al-Dhahir;Xinya Niu;P.P. Altermatt;Phillip Hamer
最大限度地减少硅界面处的电荷损失是高效太阳能电池的主要开发领域。在这里，我们报告的界面上实现的改进，通过建立一个表面电场在低温烧制的介电薄膜。通过在薄膜叠层的表面上诱导电晕电场，我们观察到退火后硅-电介质界面的显著修改，这与界面缺陷的特性相关。界面的钝化性质强烈地取决于烧制期间电场的极性和强度，以及层堆叠中的介电材料。我们发现，表面电场不仅影响表面载流子的人口，但也影响退火后所得的化学界面性质。据推测，氢迁移在这些观察到的效果中发挥了作用。利用电晕感应电场可以微调薄膜表面钝化中的化学和场效应钝化，从而使研究级浮区硅的复合电流密度低至2.8 fA cm− 2，工业级织构硅的复合电流密度低至14 fA cm− 2。薄膜电极化的简单性和多功能性使得能够实现用于控制和利用太阳能电池器件中的界面的化学增强的新策略，从当前的TOPCon和PERC器件到未来的多结硅基电池。
Minimising charge losses at silicon interfaces is a major development area for highly efficient solar cells. Here we report on the interface improvements achieved by establishing a surface electric field during low-temperature firing of dielectric thin films. By inducing a corona electric field on the surface of a thin film stack, we observe significant modifications to the silicon-dielectric interface upon annealing, which correlate with the characteristics of interface defects. The passivation properties of the interfaces strongly depend on the polarity and strength of the electric field during firing, as well as the dielectric materials in the layer stack. We show that the surface electric fields not only influence surface carrier population but also affect the resulting chemical interface properties post-annealing. It is postulated that hydrogen migration plays a role in these observed effects. Leveraging the corona-induced electric field enables fine-tuning of both the chemical and field-effect passivation in thin film surface dielectrics, resulting in recombination current densities as low as 2.8 fA cm−2in research-grade float zone silicon, and 14 fA cm−2in industrial-grade textured silicon. The simplicity and versatility of the thin film electric polarisation enable a new strategy for controlling and exploiting the chemical enhancement of interfaces in solar cell devices, from current TOPCon and PERC devices to future multijunction silicon-based cells.