Effects of high-energy proton and electron irradiation on GaN Schottky diode
Effects of high-energy proton and electron irradiation on GaN Schottky diode
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高能质子和电子辐照对 GaN 肖特基二极管的影响
DOI：
10.1016/j.nima.2013.04.003
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
J. Kasagi and K. Neichi
中科院分区：
文献类型：
--
作者：
S. Narita;T. Hitora;E. Yamaguchi;Y. Sakemi;M. Itoh;H. Yoshida;J. Kasagi and K. Neichi
我们对GaN肖特基二极管进行了高能质子和电子辐照，并研究了其电学性能的影响。当注量达到1014质子/cm ~ 2时，二极管的暗电流和击穿电压没有明显变化。在注量为1015质子/cm ~ 2时，电流增加了103倍。电流在这些能量密度下也不稳定地波动，但几个月后没有观察到这种不稳定的行为。本征缺陷可能是由粒子辐照引起的，其中一些通过弛豫过程退火。在电子辐照下，即使注量达到1016 eons/cm ~ 2，暗电流也没有明显增加。
We performed high-energy proton and electron irradiation on a GaN Schottky diode and investigated the effects on its electrical properties. No significant changes in the dark current or breakdown voltage of the diode were observed for fluences up to ∼1014protons/cm2. The currents increased by a factor of ∼103at a fluence of ∼1015protons/cm2. The currents also fluctuated unstably at these fluences but this unstable behavior was not observed after a few months. Intrinsic defects may have been induced by particle irradiation and some of them annealed through a relaxation process. Under electron irradiation, the dark currents did not show a notable increase even with the fluence of ∼1016electrons/cm2.