Single-Photon-Emitting Optical Centers in Diamond Fabricated upon Sn Implantation
Single-Photon-Emitting Optical Centers in Diamond Fabricated upon Sn Implantation
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DOI：
10.1021/acsphotonics.7b00904
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发表时间：
2017-10-01
期刊：
影响因子：
7
通讯作者：
Olivero, P.
中科院分区：
文献类型：
--
作者：
Tchernij, S. Ditalia;Herzig, T.;Olivero, P.
本文报道了单晶金刚石中锡离子注入和退火后发光缺陷的形成。的光学中心（在593.5，620.3，630.7，和646.7 nm的发射峰）的相关光谱特征归因于Sn相关的缺陷，通过其光致发光（PL）强度与注入注量的相关性。通过Hanbury-Brown和Twiss干涉测量法获取Sn相关缺陷的二阶自相关发射函数，对Sn相关缺陷进行了识别和表征。作为激发激光功率的函数的单光子发射制度的调查显示，锡相关的缺陷是基于三能级系统与6 ns的辐射衰减寿命。在一小部分的研究中心，闪烁的PL发射的观察是一个黑暗状态的存在表示。此外，吸收依赖于激发辐射的偏振与类似的45%的对比度进行了测量。这项工作揭示了与金刚石中的IV族杂质相关的新光学中心的存在，其具有与已知的Si-V和Ge-V发射体相似的物理性质，因此，从基本和应用的角度来看，提供了感兴趣的结果。
The fabrication of luminescent defects in single-crystal diamond upon Sn implantation and annealing is reported. The relevant spectral features of the optical centers (emission peaks at 593.5, 620.3, 630.7, and 646.7 nm) are attributed to Sn-related defects through the correlation of their photoluminescence (PL) intensity with the implantation fluence. Single Sn-related defects were identified and characterized through the acquisition of their second-order autocorrelation emission functions, by means of Hanbury-Brown and Twiss interferometry. The investigation of their single-photon emission regime as a function of excitation laser power revealed that Sn-related defects are based on three-level systems with a 6 ns radiative decay lifetime. In a fraction of the studied centers, the observation of a blinking PL emission is indicative of the existence of a dark state. Furthermore, absorption dependence on the polarization of the excitation radiation with similar to 45% contrast was measured. This work shed light on the existence of a new optical center associated with a group-IV impurity in diamond, with similar photophysical properties to the already well-known Si-V and Ge-V emitters, thus, providing results of interest from both the fundamental and applicative points of view.