Growth of Two Inch Si 0.5 Ge 0.5 Bulk Single Crystals
Growth of Two Inch Si 0.5 Ge 0.5 Bulk Single Crystals
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两英寸 Si 0.5 Ge 0.5 大块单晶的生长
DOI：
10.7567/ssdm.2014.c-8-1
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
S. Yoda
中科院分区：
文献类型：
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作者：
K. Kinoshita;Y. Arai;O. Nakatsuka;Keisuke Taguchi;H. Tomioka;R. Tanaka;S. Yoda
采用移动液相区法生长了2英寸均匀的Si_（0.5）Ge_（0.5）块体单晶。垂直于生长轴切片的圆盘的整个面积的浓度变化小于1%。轴向组成均匀性也是优异的，并显示出良好的结晶度。
Two inch homogeneous Si0.5Ge0.5 bulk single crystals were grown by the traveling liquidus-zone (TLZ) method. Concentration variation was less than 1% for the whole area of a disc sliced perpendicular to the growth axis. Axial compositional homogeneity was also excellent and showed good crystallinity.